? 2004 ixys all rights reserved 1 - 2 dsep 8-06b 418 ixys reserves the right to change limits, test conditions and dimensions. i fav = 10 a v rrm = 600 v t rr = 30 ns v rsm v rrm type v v 600 600 dsep 8-06b symbol conditions maximum ratings i frms 35 a i favm t c = 125c; rectangular, d = 0.5 10 a i fsm t vj = 45c; t p = 10 ms (50 hz), sine 50 a e as t vj = 25c; non-repetitive 0.1 mj i as = 0.9 a; l = 180 h i ar v a = 1.5 v r typ.; f = 10 khz; repetitive 0.1 a t vj -55...+175 c t vjm 175 c t stg -55...+150 c p tot t c = 25c 60 w m d mounting torque 0.4...0.6 nm weight typical 2 g symbol conditions characteristic values typ. max. i r t vj = 25c v r = v rrm 60 a t vj = 150c v r = v rrm 0.25 ma v f i f = 10 a; t vj = 150c 1.66 v t vj = 25c 2.66 v r thjc 2.5 k/w r thch 0.5 k/w t rr i f = 1 a; -di/dt = 50 a/s; 30 ns v r = 30 v; t vj = 25c i rm v r = 100 v; i f = 12 a; -di f /dt = 100 a/s 2.4 a t vj = 100c hiperfred tm epitaxial diode with soft recovery features international standard package planar passivated chips very short recovery time extremely low switching losses low i rm -values soft recovery behaviour epoxy meets ul 94v-0 applications antiparallel diode for high frequency switching devices antisaturation diode snubber diode free wheeling diode in converters and motor control circuits rectifiers in switch mode power supplies (smps) inductive heating uninterruptible power supplies (ups) ultrasonic cleaners and welders advantages avalanche voltage rated for reliable operation soft reverse recovery for low emi/rfi low i rm reduces: - power dissipation within the diode - turn-on loss in the commutating switch dimensions see outlines.pdf pulse test: pulse width = 5 ms, duty cycle < 2.0 % pulse width = 300 s, duty cycle < 2.0 % data according to iec 60747 and per diode unless otherwise specified: a = anode, c = cathode, tab = cathode c a to-220 ac c (tab) c a
? 2004 ixys all rights reserved 2 - 2 dsep 8-06b 418 ixys reserves the right to change limits, test conditions and dimensions. 200 600 1000 0 400 800 40 60 80 100 0.00001 0.0001 0.001 0.01 0.1 1 0.001 0.01 0.1 1 10 0 40 80 120 160 0.0 0.5 1.0 1.5 2.0 k f t vj c -di f /dt t s k/w 0 200 400 600 800 1000 0 20 40 60 0.0 0.1 0.2 0.3 v fr di f /dt v 200 600 1000 0 400 800 0 2 4 6 8 10 100 1000 0 50 100 150 200 250 0123 0 5 10 15 20 25 30 i rm q r i f a v f -di f /dt -di f /dt a/ s a v nc a/ s a/ s t rr ns t fr z thjc a/ s s t vj = 150c t vj = 100c t vj = 25c i rm q r v fr t vj = 100c v r = 300 v t vj = 100c v r = 300 v t vj = 100c v r = 300 v dsep 8-06b t fr i f = 5 a i f = 10 a i f = 20 a i f = 5 a i f = 10 a i f = 20 a i f = 5 a i f = 10 a i f = 20 a t vj = 100c i f = 10 a fig. 3 peak reverse current i rm versus -di f /dt fig. 2 reverse recovery charge q r versus -di f /dt fig. 1 forward current i f versus v f fig. 4 dynamic parameters q r , i rm versus t vj fig. 5 recovery time t rr versus -di f /dt fig. 6 peak forward voltage v fr and t fr versus di f /dt fig. 7 transient thermal resistance junction to case note: fig. 2 to fig. 6 shows typical values constants for z thjc calculation: ir thi (k/w) t i (s) 1 1.449 0.0052 2 0.5578 0.0003 3 0.4931 0.0169
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